Title :
Temperature dependence of the wavelength of quantum dot lasers
Author :
Thomson, J. ; Summers, H. ; Smowton, P. ; Herrmann, E. ; Blood, P. ; Hopkinson, M.
Author_Institution :
Dept. of Phys. & Astron., Cardiff Univ., UK
Abstract :
We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 A wide in a waveguide core region of AlGaAs with cladding layers of AlGaAs. Measurements have been made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. We have made detailed studies of the gain spectra as a function of temperature which have enabled us to identify the origins of this temperature insensitivity and to infer information regarding the form of the broadened distribution of dot states.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; optical loss measurement; optical testing; quantum well lasers; semiconductor device testing; semiconductor quantum dots; thermo-optical effects; 100 A; AlGaAs; GaAs; InGaAs dots; broadened distribution; cladding layers; dot states; gain spectra; optical absorption; optical mode loss measurements; quantum dot laser wavelength; segmented contact; single GaAs quantum well; single layer; single pass technique; temperature dependence; temperature insensitivity; waveguide core region; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical devices; Optical waveguides; Quantum dot lasers; Quantum well lasers; Temperature dependence; Temperature distribution; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882324
