Temperature dependence of the wavelength of quantum dot lasers

Author

Thomson, J. ; Summers, H. ; Smowton, P. ; Herrmann, E. ; Blood, P. ; Hopkinson, M.

Author_Institution

Dept. of Phys. & Astron., Cardiff Univ., UK

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

135

Lastpage

136

Abstract

We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 A wide in a waveguide core region of AlGaAs with cladding layers of AlGaAs. Measurements have been made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. We have made detailed studies of the gain spectra as a function of temperature which have enabled us to identify the origins of this temperature insensitivity and to infer information regarding the form of the broadened distribution of dot states.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; optical loss measurement; optical testing; quantum well lasers; semiconductor device testing; semiconductor quantum dots; thermo-optical effects; 100 A; AlGaAs; GaAs; InGaAs dots; broadened distribution; cladding layers; dot states; gain spectra; optical absorption; optical mode loss measurements; quantum dot laser wavelength; segmented contact; single GaAs quantum well; single layer; single pass technique; temperature dependence; temperature insensitivity; waveguide core region; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical devices; Optical waveguides; Quantum dot lasers; Quantum well lasers; Temperature dependence; Temperature distribution; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882324

Filename

882324