183 nm tuning range in a grating-coupled external-cavity quantum dot laser

Author

Varangis, P.M. ; Li, H. ; Liu, G.T. ; Newell, T.C. ; Stintz, A. ; Fuchs, B. ; Malloy, K.J. ; Lester, L.F.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

137

Lastpage

138

Abstract

We report on the 183 nm tuning range of an anti-reflection coated quantum dot (QD) laser using a diffraction grating in an external-cavity configuration. Over this range the laser threshold current density varied between 0.25 kA/cm/sup 2/ and 2.22 kA/cm/sup 2/ with an average value of 0.84 kA/cm/sup 2/. The laser active region is composed of a single InAs quantum dot layer confined in the middle of a 10-nm thick InGaAs quantum well and sandwiched by GaAs waveguide layers.

Keywords

III-V semiconductors; current density; diffraction gratings; indium compounds; laser cavity resonators; laser tuning; quantum well lasers; semiconductor quantum dots; waveguide lasers; 10 nm; 183 nm tuning range; GaAs waveguide layers; InAs; InAs quantum dot layer; InGaAs; InGaAs quantum well; anti-reflection coated; diffraction grating; external-cavity configuration; grating-coupled external-cavity quantum dot laser; laser active region; laser threshold current density; Current density; Gratings; Laser tuning; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Stationary state; Threshold current; Tunable circuits and devices; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882325

Filename

882325