DocumentCode
2604710
Title
Susceptibility of Semiconductor Devices to Thermal Second Breakdown
Author
Cohn, Norman S.
Author_Institution
Naval Ordnance Laboratory, Silver Spring, Maryland 20910. (202) 394-1746
fYear
1974
fDate
27120
Firstpage
90
Lastpage
93
Abstract
A method for determining the susceptibility of semiconductor devices to damage from an electro-magnetic pulse (EMP) due to induced thermal second breakdown is described. The method can be used as a nondestructive screening test. It is based on the increase in junction reverse breakdown voltage with temperature and can be used to find the most EMP resistant devices of a given device type. A mathematical explanation is presented, and other tentative applications are proposed.
Keywords
Breakdown voltage; Circuit testing; Current measurement; EMP radiation effects; Electric breakdown; Pulse measurements; Semiconductor device breakdown; Semiconductor devices; Semiconductor diodes; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1974.362634
Filename
4208012
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