Title :
Susceptibility of Semiconductor Devices to Thermal Second Breakdown
Author_Institution :
Naval Ordnance Laboratory, Silver Spring, Maryland 20910. (202) 394-1746
Abstract :
A method for determining the susceptibility of semiconductor devices to damage from an electro-magnetic pulse (EMP) due to induced thermal second breakdown is described. The method can be used as a nondestructive screening test. It is based on the increase in junction reverse breakdown voltage with temperature and can be used to find the most EMP resistant devices of a given device type. A mathematical explanation is presented, and other tentative applications are proposed.
Keywords :
Breakdown voltage; Circuit testing; Current measurement; EMP radiation effects; Electric breakdown; Pulse measurements; Semiconductor device breakdown; Semiconductor devices; Semiconductor diodes; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1974.362634
