Title :
Noise and linearity analysis for a 1.9 GHz CMOS LNA
Author :
Guo, Wei ; Huang, Daquan
Author_Institution :
Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low, noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Both the theoretical analysis and the simulation results show that, for LNAs with the cascode structure,. the first MOSFET dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade-offs. A 1.9 GHz CMOS LNA simulation results are also given as an application of the developed theory.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; equivalent circuits; integrated circuit noise; linear network analysis; 1.9 GHz; CMOS LNA simulation; LNA designs; RFICs; cascode architecture; linearity analysis; linearity improvement techniques; linearity performances; low noise amplifiers; noise analysis; noise improvement techniques; noise performances; radiofrequency integrated circuits; Circuit simulation; Computational modeling; Computer architecture; Computer simulation; Integrated circuit noise; Linearity; Low-noise amplifiers; MOSFET circuits; Radiofrequency amplifiers; Radiofrequency integrated circuits;
Conference_Titel :
Circuits and Systems, 2002. APCCAS '02. 2002 Asia-Pacific Conference on
Print_ISBN :
0-7803-7690-0
DOI :
10.1109/APCCAS.2002.1115281