Title :
SEM Evaluation of Metallization on Semiconductors
Author :
Fresh, Donald L. ; Adolphsen, John W.
Author_Institution :
The Aerospace Corporation, P.O. Box 92957, Los Angeles, Ca. 90009
Abstract :
A test method for the evaluation of metallization on semiconductors is presented and discussed. The method has been prepared in MIL-STD format for submittal as a proposed addition to MIL-STD-883. It is applicable to discrete devices and to integrated circuits and specifically addresses batch-process oriented defects. Quantitative accept/reject criteria are given for contact windows, other oxide steps, and general interconnecting metallization. Figures are provided that illustrate typical types of defects. Apparatus specifications, sampling plans, and specimen preparation and examination requirements are described. Procedures for glassivated devic es and for multi-metal interconnection systems are included.
Keywords :
Aerospace testing; Circuit testing; Contacts; Inspection; Integrated circuit interconnections; Metallization; Optical microscopy; Scanning electron microscopy; Semiconductor device testing; Windows;
Conference_Titel :
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1974.362638
