Title :
1.55-/spl mu/m, InP-lattice-matched VCSELs operating at RT under CW
Author :
Nakagawa, S. ; Hall, E.M. ; Almuneau, G. ; Kim, J.K. ; Kroemer, H. ; Coldren, L.A.
Author_Institution :
Electr. & Comput. Eng. & Mater., California Univ., Santa Barbara, CA, USA
Abstract :
We demonstrate the first room temperature, continuous-wave (CW) operation of a 1.55-/spl mu/m InGaAs vertical-cavity surface emitting laser (VCSEL) that is completely lattice-matched to InP and produced in one epitaxial growth. The structure employed intracavity contacts with an air-gap aperture. The threshold current and threshold current density were 6.2mA and 1.97kA/cm/sup 2/, respectively, at 200 C with a 20-/spl mu/m-diameter current aperture.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; infrared sources; laser transitions; semiconductor lasers; surface emitting lasers; 1.55 mum; 1.55-/spl mu/m InGaAs vertical-cavity surface emitting laser; 20 C; 20 mum; InGaAs; InP; InP-lattice-matched VCSELs; VCSEL; air-gap aperture; completely lattice-matched; continuous-wave; epitaxial growth; intracavity contacts; room temperature; threshold current; threshold current density; Apertures; Distributed Bragg reflectors; Gold; Impedance; Indium phosphide; Power generation; Temperature; Thermal conductivity; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882332
