Title :
InP-based vertical-cavity surface-emitting lasers for 1.5-1.8 /spl mu/m wavelength range
Author :
Shau, R. ; Ortsiefer, M. ; Bohm, G. ; Kohler, F. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
A novel approach for VCSELs in the 1.5-1.8 /spl mu/m wavelength range has been presented yielding submilliamp lasing in CW operation to beyond room temperature, optical powers in excess of 1 mW and single mode operation.
Keywords :
indium compounds; infrared sources; laser transitions; quantum well lasers; surface emitting lasers; 1.5 to 1.8 mum; CW operation; InP; InP-based vertical-cavity surface-emitting lasers; VCSELs; optical powers; room temperature; single mode operation; submilliamp lasing; Dielectric substrates; Distributed Bragg reflectors; Mirrors; Optical sensors; Optical surface waves; Resistance heating; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882333
