Title :
Bipolar cascade 1.55 /spl mu/m VCSELs with >1 differential quantum efficiency and CW operation
Author :
Kim, J.K. ; Hall, E. ; Nakagawa, S. ; Huntington, A. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We present completely monolithic, single-step grown, bipolar cascade MQW vertical-cavity surface-emitting lasers (VCSELs) at 1.55 /spl mu/m with greater-than-unity differential quantum efficiency. A typical device had a threshold current density of 1 kA/cm/sup 2/, a threshold voltage of 3.2 V, and demonstrated continuous wave (CW) operation up to 8 C.
Keywords :
infrared sources; laser transitions; quantum well lasers; surface emitting lasers; 1.55 mum; CW operation; bipolar cascade 1.55 /spl mu/m VCSELs; differential quantum efficiency; greater-than-unity differential quantum efficiency; single-step grown; threshold current density; threshold voltage; vertical-cavity surface-emitting lasers; Conductivity; Gold; Pulse measurements; Quantum cascade lasers; Quantum well lasers; Temperature; Thermal resistance; Threshold current; Vertical cavity surface emitting lasers; Voltage;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882334
