DocumentCode
2604810
Title
Superlattice barrier 1528 nm vertical cavity laser with 85/spl deg/C continuous wave operation
Author
Karim, A. ; Black, K.A. ; Abraham, P. ; Lofgreen, D. ; Chiu, Y.J. ; Piprek, J. ; Bowers, J.E.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
2000
fDate
25-28 Sept. 2000
Firstpage
157
Lastpage
158
Abstract
We report 85 C continuous wave operation of a 1528 nm VCSEL with an InP-InGaAsP active region and wafer fused GaAs-AlGaAs mirrors. A superlattice barrier was used to reduce defect density in the wafer fused active region.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser mirrors; laser transitions; quantum well lasers; semiconductor superlattices; surface emitting lasers; wafer bonding; 1528 nm; 1528 nm VCSEL; 85 C; GaAs-AlGaAs; InP-InGaAsP; InP-InGaAsP active region; continuous wave operation; defect density; superlattice barrier; vertical cavity laser; wafer fused GaAs-AlGaAs mirrors; wafer fused active region; Electrons; Histograms; Laser modes; Power generation; Power lasers; Superlattices; Temperature; Threshold current; Vertical cavity surface emitting lasers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-6259-4
Type
conf
DOI
10.1109/ISLC.2000.882335
Filename
882335
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