• DocumentCode
    2604879
  • Title

    Anomalous Hall effect in two-dimensional semiconductors: The roles of electron-impurity and electron-phonon scatterings

  • Author

    Liu, S.Y. ; Horing, N. J Morgenstern ; Lei, X.L. ; Sawamura, M.

  • Author_Institution
    Dept. of Phys., Shanghai Jiao Tong Univ., Shanghai
  • fYear
    2007
  • fDate
    2-5 Aug. 2007
  • Firstpage
    409
  • Lastpage
    413
  • Abstract
    Taking account of both the electron-impurity and electron-phonon scatterings, the anomalous Hall effect in two dimensional electron systems is investigated by means of a kinetic equation approach. The spin-orbit coupling directly induced by an external driving electric field and the extrinsic spin-orbit coupling (associated with electron-impurity and electron-phonon scatterings) are included. The side-jump and skew-scattering contributions arising from these spin-orbit couplings to anomalous Hall current are expressed in terms of the distribution function. Performing a numerical calculation for InSb/AlInSb quantum wells, we analyze the effects of both electron-impurity and electron-phonon scatterings on anomalous Hall current. The temperature dependence of anomalous Hall current is also studied in the regime 0<T<300 K.
  • Keywords
    Hall effect; III-V semiconductors; aluminium compounds; electron-phonon interactions; indium compounds; semiconductor quantum wells; spin-orbit interactions; Hall effect; InSb-AlInSb; electron-impurity; electron-phonon scatterings; kinetic equation approach; spin-orbit coupling; two-dimensional semiconductors; Approximation methods; Couplings; Electrons; Hall effect; Impurities; Magnetization; Particle scattering; Phonons; Physics; Temperature dependence; Anomalous-Hall-Effect; Electric-Field-Induced-SHE; Impurity & Phonon Scattering; Quantum-Well; Side-Jump; Skew Scattering; Spin-Orbit-Coupling; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-0607-4
  • Electronic_ISBN
    978-1-4244-0608-1
  • Type

    conf

  • DOI
    10.1109/NANO.2007.4601221
  • Filename
    4601221