Title :
Sensitivity of Current Pulse Burn-Out Testing to the Geometry of Defects in Aluminum Metallization
Author :
Gurev, Harold S.
Author_Institution :
Materials Research Laboratory, Motorola Semiconductor Products Division, 5005 E. McDowell Road, Phoenix, Arizona 85008
Abstract :
Current pulses, with power levels sufficient to burn out metal stripes in the 30 ns to 1000 ns pulse time range, were found to overcome lateral heat losses and permit the detection of metallization step coverage defects for the several cases of practical interest investigated. In the most extreme case, a sharp groove about 400 A wide, extending to within 650 A of the bottom of 9000 A thick aluminum metallization, was easily detected by pulse testing.
Keywords :
Aluminum; Circuit testing; Geometry; Inorganic materials; Laboratories; Materials testing; Metallization; Pulse measurements; Semiconductor device testing; Semiconductor materials;
Conference_Titel :
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1974.362646
