DocumentCode
2604899
Title
Sensitivity of Current Pulse Burn-Out Testing to the Geometry of Defects in Aluminum Metallization
Author
Gurev, Harold S.
Author_Institution
Materials Research Laboratory, Motorola Semiconductor Products Division, 5005 E. McDowell Road, Phoenix, Arizona 85008
fYear
1974
fDate
27120
Firstpage
187
Lastpage
195
Abstract
Current pulses, with power levels sufficient to burn out metal stripes in the 30 ns to 1000 ns pulse time range, were found to overcome lateral heat losses and permit the detection of metallization step coverage defects for the several cases of practical interest investigated. In the most extreme case, a sharp groove about 400 A wide, extending to within 650 A of the bottom of 9000 A thick aluminum metallization, was easily detected by pulse testing.
Keywords
Aluminum; Circuit testing; Geometry; Inorganic materials; Laboratories; Materials testing; Metallization; Pulse measurements; Semiconductor device testing; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1974.362646
Filename
4208024
Link To Document