Title :
Indium phosphide nanowire photoconductors on non-single crystalline silicon-based platform
Author :
Kobayashi, Nobuhiko P. ; Logeeswaran, V.J. ; Li, Xuema ; Islam, M. Saif ; Straznicky, Joseph ; Wang, Shih-Yuan ; Li, Zhiyong ; Williams, R.Stanley
Author_Institution :
Baskin Sch. of Eng., California Univ., Santa Cruz, CA
Abstract :
We describe the fabrication and characterization of photoconductors in which an ensemble of indium phosphide nanoneedles was utilized. DC electrical transport properties of the fabricated photoconductors were characterized under illumination with monochromatic light at 633 nm. This is the first demonstration of III-V compound semiconductor nanometerscale structures monolithically integrated on non-single crystalline silicon-based materials as an optoelectronic device that can be fabricated by a simple and flexible process not limited by single crystal substrates.
Keywords :
III-V semiconductors; indium compounds; nanolithography; nanowires; photoconducting materials; photoconductivity; photolithography; semiconductor growth; semiconductor quantum wires; DC electrical transport; III-V compound semiconductor; InP; monochromatic light illumination; monolithic integration; nanoneedles; nanowire photoconductors; nonsingle crystalline silicon-based platform; optoelectronic device; photolithography; wavelength 633 nm; Crystalline materials; Crystallization; Fabrication; III-V semiconductor materials; Indium phosphide; Lighting; Nanoscale devices; Nanostructures; Photoconducting materials; Photoconductivity; indium phosphide; monolithic integration; nanowire; photoconductor; silicon;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601233
