Title :
Fabrication and evaluation of metal-oxide-semiconductor transistor probe
Author :
Lee, Sang H. ; Lim, Geunbae ; Moon, Wonkyu
Author_Institution :
Dept. of Mech. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang
Abstract :
The metal-oxide-semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip is fabricated and evaluated for the surface electric properties. The high working speed and the high sensitivity of the MOS transistor improve the scanning speed and the system minimization. The device is fabricated with the standard CMOS process and FIB nano deposition. The device is applied to the patterned sample plate, and the measuring result shows the well defined line patterns.
Keywords :
CMOS integrated circuits; MOSFET; focused ion beam technology; nanotechnology; FIB nanodeposition; MOS transistor; focused-ion-beam technique; metal-oxide-semiconductor transistor probe; semiconductor device fabrication; standard CMOS process; surface electric properties; CMOS process; Current measurement; Fabrication; Frequency; MOSFETs; Mechanical engineering; Mechanical factors; Nanotechnology; Scanning probe microscopy; Shape; FIB; Metal-Oxide-Semicondutor (MOS) transistor; SPM probe; nano tip; surface electric property;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601234
