DocumentCode :
2605078
Title :
Degradation of Gold-Germanium Ohmic Contact to n-GaAs
Author :
Ohata, K. ; Ogawa, M.
Author_Institution :
Central Research Laboratories, Nippon Electric Company Ltd., 1753 Shimonumabe, Nakahara-ku, Kawasaki, Japan
fYear :
1974
fDate :
27120
Firstpage :
278
Lastpage :
283
Abstract :
The metallurgical and electrical investigations were carried out on the Pt/Au-Ge and Ni/Au-Ge ohmic contacts to n-GaAs in focusing the degradation during aging. The characteristic structures in the alloyed regions and their metallurgical changes during aging (330°C) were examined by means of Electron Probe Micro-Analysis. The thick Pt and Ni films in the contact systems caused the reaction during aging to proceed. The degradation of the contact resistance during aging was found to take place with the progress of the metallurgical reaction. The details of the investigation including the discussions on the degradation mechanism will be described.
Keywords :
Aging; Alloying; Degradation; Electrons; Gallium arsenide; Gold alloys; Nickel alloys; Ohmic contacts; Probes; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1974.362658
Filename :
4208036
Link To Document :
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