• DocumentCode
    2605172
  • Title

    Control of Electrostatic Discharge Damage to Semiconductors

  • Author

    Freeman, E.R. ; Beall, J.R.

  • Author_Institution
    Martin Marietta Corporation, P.O. Box 179, Denver, Colorado 80201
  • fYear
    1974
  • fDate
    27120
  • Firstpage
    304
  • Lastpage
    312
  • Abstract
    Numerous semiconductor failures have been experienced in the Viking Lander, Skylab, and Titan III Launch Vehicle programs. These included junction field effect transistors (J-FET), planar diodes, bipolar digital integrated circuits in discrete and hybrid packages, internally compensated operational amplifiers, and input-protected MOS LSI circuits (Metal-Oxide Semiconductor Large Scale Integrated circuits). All parts had passed high-reliability 100% screening tests and came from lots that had met rigorous sample acceptance test requirements. All of the failures were encountered during some phase of handling or test of the parts or circuit assemblies. Junction failures exhibited significant increases in reverse leakage current and degradation of reverse breakdown voltage. Failure sites were isolated to minute rediffusion of the junction at the silicon/silicon-dioxide interface.
  • Keywords
    Circuit testing; Digital integrated circuits; Electrostatic discharge; FETs; Hybrid junctions; Integrated circuit packaging; Large scale integration; Semiconductor device packaging; Semiconductor diodes; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1974. 12th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1974.362663
  • Filename
    4208041