DocumentCode
2605172
Title
Control of Electrostatic Discharge Damage to Semiconductors
Author
Freeman, E.R. ; Beall, J.R.
Author_Institution
Martin Marietta Corporation, P.O. Box 179, Denver, Colorado 80201
fYear
1974
fDate
27120
Firstpage
304
Lastpage
312
Abstract
Numerous semiconductor failures have been experienced in the Viking Lander, Skylab, and Titan III Launch Vehicle programs. These included junction field effect transistors (J-FET), planar diodes, bipolar digital integrated circuits in discrete and hybrid packages, internally compensated operational amplifiers, and input-protected MOS LSI circuits (Metal-Oxide Semiconductor Large Scale Integrated circuits). All parts had passed high-reliability 100% screening tests and came from lots that had met rigorous sample acceptance test requirements. All of the failures were encountered during some phase of handling or test of the parts or circuit assemblies. Junction failures exhibited significant increases in reverse leakage current and degradation of reverse breakdown voltage. Failure sites were isolated to minute rediffusion of the junction at the silicon/silicon-dioxide interface.
Keywords
Circuit testing; Digital integrated circuits; Electrostatic discharge; FETs; Hybrid junctions; Integrated circuit packaging; Large scale integration; Semiconductor device packaging; Semiconductor diodes; Vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1974.362663
Filename
4208041
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