Author :
Suthram, S. ; Majhi, P. ; Sun, G. ; Kalra, P. ; Harris, H.R. ; Choi, K.J. ; Heh, D. ; Oh, J. ; Kelly, D. ; Choi, R. ; Cho, B.J. ; Hussain, M.M. ; Smith, C. ; Banerjee, S. ; Tsai, W. ; Thompson, S.E. ; Tseng, H.-H. ; Jammy, R.
Abstract :
We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; k.p calculations; nanoelectronics; quantum well devices; semiconductor quantum wells; silicon; Si-Si1-xGex-Si; additive uniaxial strain; high- k-metal gate stacks; high-performance pMOSFET; k.p calculations; low-off-state leakage; nanotechnology node; size 22 nm; strained quantum wells; uniaxial stress; Capacitive sensors; Epitaxial growth; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; III-V semiconductor materials; MOSFETs; Rapid thermal annealing; Silicon germanium; Stress;
