DocumentCode :
2605319
Title :
A Comprehensive Atomic Study of Carbon Nanotube Schottky Diode Using First Principles Approach
Author :
Bai, Ping ; Lam, Kai Tak ; Li, Erping ; Chang, Ken Kai-fu
Author_Institution :
Inst. of High Performance Comput., Singapore
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
749
Lastpage :
752
Abstract :
In this paper, Carbon nanotube (CNT) Schottky diodes are investigated from the atomic perspective using the first principles DFT-NEGF method. Two atomic models are built based on experimental setting. The atomic behaviors of the CNT Schottky diodes are explored through density of states and charge transfer of the atomic models. The electron transport properties of the CNT diodes are analyzed through transmission function, energy gap shifting and I-V characteristics.
Keywords :
Schottky diodes; carbon nanotubes; charge exchange; DFT-NEGF method; I-V characteristics; atomic models; carbon nanotube Schottky diode; charge transfer; comprehensive atomic study; energy gap shifting; Atomic layer deposition; Carbon nanotubes; Charge transfer; Electrodes; Electrons; Geometry; Nanoelectronics; Schottky barriers; Schottky diodes; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419055
Filename :
4419055
Link To Document :
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