Analytical Model of Carbon Nanotube Electrostatics: Density of States, Effective Mass, Carrier Density, and Quantum Capacitance

Author

Akinwande, Deji ; Nishi, Yoshio ; Wong, H. S Philip

Author_Institution

Stanford Univ., Stanford

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

753

Lastpage

756

Abstract

Fundamental electrostatic properties of achiral carbon nanotubes (CNTs) are derived analytically. These include an exact derivation of the density of states within the nearest neighbor tight-binding formalism, the group velocity, and the effective mass. In addition, the non-degenerate equilibrium carrier density, and quantum capacitance are presented analytically. The quantum capacitance is used to provide a low energy C-V theory for a top-gated CNT device with good correlation to experimental data.

Keywords

capacitance; carbon nanotubes; carrier density; effective mass; electronic density of states; electrostatics; tight-binding calculations; C; achiral carbon nanotubes; carbon nanotube electrostatics model; density of states; effective mass; electrostatic properties; group velocity; low energy C-V theory; nearest neighbor tight-binding formalism; nondegenerate equilibrium carrier density; quantum capacitance; top-gated CNT device; Analytical models; Capacitance-voltage characteristics; Carbon nanotubes; Charge carrier density; Effective mass; Electrostatic analysis; Equations; Photonic band gap; Quantum capacitance; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419056

Filename

4419056