• DocumentCode
    2605358
  • Title

    SOS Island Edge Profiles Following Oxidation

  • Author

    Lee, S.N. ; Kjar, R.A.

  • Author_Institution
    Rockwell International Corporation, 3370 Miraloma Avenue, Anaheim, California 92803
  • fYear
    1975
  • fDate
    27485
  • Firstpage
    34
  • Lastpage
    37
  • Abstract
    A study of silicon and oxide profiles at the edges of silicon islands etched in silicon-on-sapphire (SOS) has shown that, following thermal oxidation of the silicon, a " V"- shaped groove forms between the silicon dioxide grown on the island edge and the sapphire substrate. This groove can cause etching and metal coverage anomalies at the island edges resulting in poor circuit yield and reliability.
  • Keywords
    Anisotropic magnetoresistance; Etching; Integrated circuit reliability; Integrated circuit yield; Nose; Oxidation; Protection; Semiconductor epitaxial layers; Silicon compounds; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1975. 13th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1975.362673
  • Filename
    4208054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2605358