Title :
Performance Comparison of Graphene Nanoribbon Schottky Barrier and MOS FETs
Author :
Fiori, G. ; Yoon, Youngki ; Hong, Seokmin ; Iannaccone, Giuseppe ; Guo, Jing
Author_Institution :
Univ. di Pisa, Pisa
Abstract :
Graphene nanoribbon (GNR) Schottky barrier (SB) FETs and MOSFETs are studied using self-consistent atomistic simulations. MOSFETs show 30-70% performance improvement in terms of larger on current, larger maximum achievable on-off current ratio, larger cutoff frequency, smaller intrinsic delay and better saturation behavior for ideal structures. Disorders, such as lattice vacancies, edge roughness, and ionized impurities, have a significant impact on device performance and variability, due to strong sensitivity to electrostatic environment and channel atomistic structure.
Keywords :
MOSFET; Schottky barriers; GNR; MOSFET; SB; Schottky barrier; channel atomistic structure; electrostatic environment; graphene nanoribbon; Cutoff frequency; Delay; FETs; Impurities; Lattices; MOSFETs; Poisson equations; Schottky barriers; Transconductance; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419057
