Title :
2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications
Author :
Myoung-Jae Lee ; Youngsoo Park ; Bo-Soo Kang ; Seung-eon Ahn ; Changbum Lee ; Kihwan Kim ; Wenxu Xianyu ; Stefanovich, G. ; Jung-Hyun Lee ; Seok-Jae Chung ; Yeon-Hee Kim ; Chang-Soo Lee ; Jong-Bong Park ; In-Kyeong Yoo
Author_Institution :
Samsung Adv. Inst. of Technol., Gyeonggi
Abstract :
We have successfully integrated a 2-stack 8times8 array 1D- lR (one diode-one resistor) structure with 0.5 mumtimes0.5 mum cells in order to demonstrate the feasibility of high density stacked RRAM. p-CuOx/n-InZnOx heterojunction thin film was used for the first time as a oxide diode which shows increased current density of two orders over our previous p-NiOx/n-TiOx oxide diode. And Ti-doped NiO was used for the storage node. No limitation to the number of stacks has been observed from our results. Cell and device properties of our cross-point structure 8times8 array are reported. In addition, all fabrication processes were done at room temperature without other dedicated facilities or processes allowing for compatibility with current CMOS technology. Bi-stable switching for 1D-1R memory was demonstrated for our 2-stack cross-point structures showing excellent behavior for both diode and storage nodes. The forward current density for p-CuOx/n-IZOx diodes was over 104A/cm2, and the operation voltage for the storage node with diode attached was around 3 V.
Keywords :
diodes; etching; integrated memory circuits; photolithography; random-access storage; resistors; switching; CMOS technology; CuOx-InZnOx; bi-stable switching; cross-point structure; fabrication processes; heterojunction thin film; high density resistance RAM applications; oxide diodes; photolithography etching techniques; size 0.5 mum; switch elements; CMOS technology; Current density; Diodes; Fabrication; Heterojunctions; Read-write memory; Resistors; Switches; Temperature; Transistors;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419061