• DocumentCode
    2605477
  • Title

    Fast switching and long retention Fe-O ReRAM and its switching mechanism

  • Author

    Muraoka, S. ; Osano, K. ; Kanzawa, Y. ; Mitani, S. ; Fujii, S. ; Katayama, K. ; Katoh, Y. ; Wei, Z. ; Mikawa, T. ; Arita, K. ; Kawashima, Y. ; Azuma, R. ; Kawai, K. ; Shimakawa, K. ; Odagawa, A. ; Takagi, T.

  • Author_Institution
    Matsushita Electr. Ind. Co. Ltd., Osaka
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    779
  • Lastpage
    782
  • Abstract
    A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe3O4 and y-Fe2O3. Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.
  • Keywords
    circuit switching; high-speed techniques; iron compounds; oxidation; random-access storage; reduction (chemical); zinc; FeO; high-speed resistance-switching; iron oxide ReRAM; long-retention characteristics; redox reaction; reduction process; resistive memory; time 10 ns; Annealing; Anodes; Cities and towns; Crystalline materials; Electrodes; Infrared spectra; Iron; Region 1; Temperature; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419063
  • Filename
    4419063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2605477