Single-electron circuit for stochastic data processing using nano-MOSFETs

Author

Nishiguchi, Katsuhiko ; Fujiwara, Akira

Author_Institution

NTT Corp., Atsugi

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

791

Lastpage

794

Abstract

A MOSFET-based circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly passing through the nanoscale silicon-on-insulator (SOI) MOSFET are monitored by an electrometer in real time. Such a random behavior of single electrons is used for random-number generation suitable for a data processing which stochastically extracts the optimum solution among various ones. The use of electron transport in MOSFETs provides high controllability of the randomness, which prevents extracted solutions from staying at undesirable local minimum, as well as fast generation of random numbers. The present result promises new single-electron applications using nanoscale MOSFETs.

Keywords

MOSFET; electrometers; nanoelectronics; silicon-on-insulator; single electron transistors; electrometer; electron transport; nano-MOSFET; random-number generation; silicon-on-insulator; single-electron circuit; stochastic data processing; Controllability; Data mining; Data processing; Electrons; MOSFET circuits; Monitoring; Random number generation; Silicon on insulator technology; Stochastic processes; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419066

Filename

4419066