Title :
CMOS and Interconnect Reliability - Negative Bias Temperature Instability
Author :
Bersuker, Gennadi ; Suehle, John
Author_Institution :
SEMATECH
Keywords :
Degradation; Dielectrics; NIST; Negative bias temperature instability; Niobium compounds; Predictive models; Random access memory; Testing; Threshold voltage; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419067
