Title :
Analysis of Deposited Glass Layer Defects
Author_Institution :
Rome Air Development Center, Reliability Branch, Reliability Physics Section, Griffiss Air Force Base, New York 13441
Abstract :
This paper reviews the results of deposited glass layer analysis carried out during device failure analysis and characterization studies performed at the Rome Air Development Center. The Scanning Electron Microscope (SEM) was used as the principal analysis technique for this study. The variables under consideration were glass deposition method, device interconnect metallurgy, package type and device stress conditions. The effects of glass layer defects on device reliability are discussed along with qualification and screen tests aimed at eliminating batch-related problems.
Keywords :
Aluminum; Failure analysis; Glass; Integrated circuit interconnections; Metallization; Packaging; Performance analysis; Protection; Scanning electron microscopy; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1975. 13th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1975.362686