DocumentCode :
2605609
Title :
Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) IDLIN Technique
Author :
Kumar, E.N. ; Maheta, V.D. ; Purawat, S. ; Islam, A.E. ; Olsen, C. ; Ahmed, K. ; Alam, M.A. ; Mahapatra, S.
Author_Institution :
IIT Mumbai, Mumbai
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
809
Lastpage :
812
Abstract :
An ultra-fast on-the-fly (UF-OTF) IDLIN technique having 1 mus resolution is developed and used to study gate insulator process dependence of NBTI in silicon oxynitride (SiON) p- MOSFETs. The nitrogen density at the Si-SiON interface and the thickness of SiON layer are shown to impact temperature, time, and field dependencies of NBTI. The plausible material dependence of NBTI physical mechanism is explored.
Keywords :
MOSFET; silicon compounds; IDLIN technique; negative bias temperature instability; nitrogen density; p-MOSFET; silicon oxynitride; Degradation; Extrapolation; MOSFET circuits; Materials reliability; Niobium compounds; Plasma temperature; Silicon; Stress; Temperature dependence; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419071
Filename :
4419071
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2605609
بازگشت