A ZEP520-LOR bilayer resist lift-off process by e-beam lithography for nanometer pattern transfer

Author

Tu, Deyu ; Liu, Ming ; Shang, Liwei ; Xie, Changqing ; Zhu, Xiaoli

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

624

Lastpage

627

Abstract

In this work, a bilayer resist system with ZEP520 as the top layer and lift-off resist (LOR) as the bottom layer for lift-off process was investigated for the first time. The formation of undercut was studied as a critical step which makes lift-off process much more feasible in bilayer resist process. Using different dissolution rates of LOR layer, the length of undercut can be well controlled, providing reliable process. The top layer of ZEP520 is more efficient than other resists (PMMA etc.) for e-beam lithography, due to its high resolution and high sensitivity. Here, a set of process parameters have been optimized to fabricate Cr metal lines with a width of less than 70 nm. This bilayer lift-off resist system can be widely used in nano-fabrication for various nano-scale structures and devices.

Keywords

dissolving; electron beam lithography; nanoelectronics; nanolithography; nanopatterning; resists; ZEP520; bilayer resist system; dissolution; electron beam lithography; lift-off resist; nanofabrication; nanometer pattern transfer; Chaos; Chromium; Electron beams; Lithography; Microelectronics; Nanotechnology; Process control; Resists; Solvents; Throughput; LOR; ZEP520; bilayer resist; electron beam lithography; lift-off;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601268

Filename

4601268