On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric

For the first time, we developed an on-the-fly method OFIT to measure the interface trap density N_IT without recovery during measurement. The OFIT produces the most reliable experimental data of the interface trap generation dynamics under stress and therefore provides a solid ground to check various modeling work. The slope n of tⁿ time evolution of DeltaN_IT under stress is temperature dependent, supporting dispersive Hydrogen transport in the oxide. Comparing OFIT data with the data measured by ultra-fast pulsed V_th measurement, we successfully decompose the NBTI DeltaV_TH into interface trap component DeltaV_TH ^IT and oxide charge component DeltaV_TH ^OX quantitatively for the p-MOSFETs with SiON gate dielectric.