Title :
Real Vth instability of pMOSFETs under practical operation conditions
Author :
Zhang, J.F. ; Ji, Zhen ; Chang, M.H. ; Kaczer, B. ; Groeseneken, G.
Author_Institution :
Liverpool John Moores Univ., Liverpool
Abstract :
Lifetime of pMOSFETs is limited by negative bias temperature instability (NBTI). For the first time, we show that the NBTI-induced threshold voltage shift, DeltaVth, measured in early works by using either the ´on-the-fly´ or the conventional transfer characteristics extrapolation techniques is not the real DeltaVth under practical operation. A new method is proposed for estimating the real DeltaVth.
Keywords :
MOSFET; electric potential; semiconductor device measurement; thermal stability; voltage measurement; NBTI-induced threshold voltage shift; negative bias temperature instability; pMOSFET instability; pMOSFET lifetime limitation; threshold voltage shift estimation method; Degradation; Electrical resistance measurement; Extrapolation; MOSFETs; Negative bias temperature instability; Niobium compounds; Stress measurement; Threshold voltage; Titanium compounds; Voltage measurement;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419073
