Electrical transport properties of alkali-metal/halogen encapsulated single-walled carbon nanotubes

Author

Shishido, J. ; Kato, T. ; Oohara, W. ; Hatakeyama, R. ; Tohji, K.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

643

Lastpage

646

Abstract

The encapsulation of alkali-metal or halogen inside single-walled carbon nanotubes (SWNTs) can be realized by a novel alkali-halogen plasma irradiation method. According to electronic transport measurements, it is found that a p-type semiconductor behavior can be strongly improved by encapsulating iodine atoms. Furthermore, a p-n junction diode-like feature is observed by selective encapsulation of cesium and iodine atoms in one individual SWNT.

Keywords

caesium; carbon nanotubes; iodine; p-n junctions; plasma materials processing; radiation effects; C; alkali-halogen plasma method; alkali-metal-halogen encapsulated single-walled carbon nanotubes; cesium atoms; electrical transport properties; electronic transport measurements; iodine atoms; p-n junction diode; p-type semiconductor; Atomic measurements; Carbon nanotubes; Cathodes; Electrons; Encapsulation; Plasma accelerators; Plasma measurements; Plasma properties; Probes; Semiconductor diodes; SWNT-FET; alkali-halogen plasma; atoms encapsulated SWNTs; p-n junction diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601272

Filename

4601272