DocumentCode
2605813
Title
A wavelet-based approach to analyze the electromagnetic wave effects on microwave transistors
Author
Movahhedi, Masoud ; Abdipour, A.
fYear
2004
fDate
14-17 Sept. 2004
Firstpage
402
Lastpage
405
Abstract
A new wavelet-based simulation approach for the analysis and simulation of microwavelmm-wave transistors is presented. The Daubechies-base wavelet approach is applied to semiconductor equations to generate a nonuniform mesh. This allows forming fine and coarse grids in locations where variable solutions change rapidly and slowly, respectively. Also, some modifications for using the generated nonuniform mesh, which has been obtained based on the dc solution, in the ac analysis is presented.
Keywords
Analytical models; Electromagnetic analysis; Electromagnetic scattering; Finite difference methods; Mesh generation; Microwave transistors; Poisson equations; Semiconductor devices; Time domain analysis; Wavelet analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Mathematical Methods in Electromagnetic Theory, 2004. 10th International Conference on
Conference_Location
Dniepropetrovsk, Ukraine
Print_ISBN
0-7803-8441-5
Type
conf
DOI
10.1109/MMET.2004.1397057
Filename
1397057
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