DocumentCode :
2605815
Title :
Quantum, Power, and Compound Semiconductors - High Voltage Power Devices
Author :
van Rijs, Fred ; Khemka, Vishnu
Author_Institution :
NXP Semiconductors
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
859
Lastpage :
859
Keywords :
Gallium arsenide; Gallium nitride; Hot carriers; MISFETs; Power semiconductor switches; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419084
Filename :
4419084
Link To Document :
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