Title :
8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation
Author :
Uemoto, Yasuhiro ; Shibata, Daisuke ; Yanagihara, Manabu ; Ishida, Hidetoshi ; Matsuo, Hisayoshi ; Nagai, Shuichi ; Batta, Nagaraj ; Li, Ming ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi ; Ueda, Daisuke
Author_Institution :
Matsushita Electr.-Panasonic, Kyoto
Abstract :
We report ultra high voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire with thick poly-AlN passivation. Extremely high blocking voltage of 8300 V is achieved while maintaining relative low specific on-state resistance (Ron*A) of 186 mOmegaldrcm2. Via-holes through sapphire at the drain electrodes enable very efficient layout of the lateral HFET array as well as better heat dissipation.
Keywords :
III-V semiconductors; aluminium compounds; electric resistance; gallium compounds; junction gate field effect transistors; passivation; power HEMT; sapphire; semiconductor device breakdown; semiconductor epitaxial layers; wide band gap semiconductors; Al2O3; AlGaN-GaN-AlN; blocking voltage; breakdown voltages; drain electrodes; heat dissipation; lateral HFET array; on-state resistance; power HFET; thick poly-crystalline aluminium nitride passivation; ultra high voltage heterojunction transistors; voltage 8300 V; Aluminum gallium nitride; Breakdown voltage; Electric breakdown; Gallium nitride; HEMTs; MODFETs; Passivation; Silicon compounds; Substrates; Thermal conductivity;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419085
