DocumentCode :
2605843
Title :
Improved spectral response of an InAs QD RC-SACM-APD with Ta2O5/SiO2 DBRs
Author :
Kim, Dong Ho ; Song, Hong Joo ; Roh, Cheong Hyun ; Hahn, Cheol-Koo ; Leem, Shi Jong ; Tsurumachi, Noriaki ; Kim, Tae Geun
Author_Institution :
Dept. of Electron. & Electr. Eng., Korea Univ., Seoul
fYear :
2007
fDate :
2-5 Aug. 2007
Firstpage :
681
Lastpage :
685
Abstract :
We report the improvement in the spectral response of an InAs QD resonant-cavity separate absorption, charge, and multiplication avalanche photodetector (RC-SACM-APD) by increasing the quantum efficiency (QE) using dielectric Ta2O5/SiO2 top distributed Bragg reflectors (DBRs). The reflectivities of the top and bottom DBRs were numerically designed to be 70 % and 99.1 %, respectively, in order to maximize the QE. The spectral response characteristics of the InAs QD RC-SACM-APD with enhanced top DBRs was remarkably improved at 1098 nm, which is close to the target wavelength of 1100 nm, and its full width at half-maximum (FWHM) was 19 nm. The photoluminescence (PL) spectra revealed an intense and narrow single-mode peak at 1101 nm. The FWHM of the PL peak was as narrow as 8 nm and the difference in wavelength between the spectrum and the PL peak was as small as 3 nm.
Keywords :
III-V semiconductors; avalanche photodiodes; cavity resonators; distributed Bragg reflectors; indium compounds; integrated optics; photodetectors; photoluminescence; semiconductor quantum dots; silicon compounds; tantalum compounds; InAs; TaO2-SiO2; avalanche photodetector; distributed Bragg reflectors; photoluminescence; quantum dots; quantum efficiency; resonant cavity; wavelength 1100 nm; Absorption; Dielectrics; Distributed Bragg reflectors; Nanotechnology; Photoconductivity; Photodetectors; Reflectivity; Resonance; Semiconductor devices; Semiconductor materials; Quantum efficiency (QE); Resonant-cavity effect (RCE); Wavelength-selective-absorption; spectral response characteristic;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
Type :
conf
DOI :
10.1109/NANO.2007.4601281
Filename :
4601281
Link To Document :
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