Title :
650 V 3.1 mΩcm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor
Author :
Morita, Tatsuo ; Yanagihara, Manabu ; Ishida, Hidetoshi ; Hikita, Masahiro ; Kaibara, Kazuhiro ; Matsuo, Hisayoshi ; Uemoto, Yasuhiro ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi ; Ueda, Daisuke
Author_Institution :
Semicond. Co., Kyoto
Abstract :
We report a normally-off GaN-based monolithic bidirectional switch for the first time. The switch consists of a double-gate AlGaN/GaN gate injection transistor (GIT) which serves normally-off operation with high drain current utilizing the hole injection from the p-type gate. The fabricated bidirectional switch exhibits high breakdown voltage of 650 V for both polarities and low on-state resistance (Ron .A) of 3.1 mΩcm2 . The GaN-based bidirectional switch can be applied to AC-AC matrix converters with high efficiency.
Keywords :
AC-AC power convertors; charge injection; gallium compounds; matrix convertors; power semiconductor switches; power transistors; semiconductor device breakdown; semiconductor device models; AC-AC matrix converters; AlGaN-GaN; GaN-based monolithic bidirectional switch; breakdown voltage; double-gate GIT; drain current; fabricated bidirectional switch; gate injection transistor; hole injection; low on-state resistance; p-type gate; voltage 650 V; Aluminum gallium nitride; Capacitors; Diodes; Gallium nitride; Insulated gate bipolar transistors; Matrix converters; Power supplies; Switches; Switching circuits; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419086
