DocumentCode :
2605936
Title :
CMOS Devices - Advanced Device Structures
Author :
Chang, Chih-Sheng ; Hokazono, Akira
Author_Institution :
TSMC
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
885
Lastpage :
885
Keywords :
Anisotropic magnetoresistance; Compressive stress; Electric variables; Etching; Germanium silicon alloys; Hydrogen; Insulation; MOSFET circuits; Nanoscale devices; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419091
Filename :
4419091
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2605936
بازگشت