DocumentCode :
2606004
Title :
The Reliability of Integrated Injection Logic Circuits for the Bell System
Author :
Hewlett, F.W., Jr. ; Pedersen, R.A.
Author_Institution :
Bell Telephone Laboratories, Incorporated Allentown, Pennsylvania 18103
fYear :
1976
fDate :
27851
Firstpage :
5
Lastpage :
10
Abstract :
The reliability of Integrated Injection Logic (I2L) or Merged Transistor Logic (MTL) circuits fabricated in a standard bipolar technology with Ti-Pt-Au interconnection is reported. The study is based on accelerated stress aging and actual field results. Experiments are described which demonstrate that I2L circuit failure in humid ambients due to Au elelctrolysis will not occur because of low voltage operation. Failure rates less than 10 FITs for an LSI part (.001% failure per 1000 device hours) under normal stress over a 40 year life are predicted for the main population by accelerated bias temperature and bias humidity stress. Well behaved current gain (ßu) under bias temperature step stress indicates that Ou degradation will not be a significant failure mechanism. At this writing, more than 60 million device hours have been accumulated for LSI chips in specific applications with no reported chip failures. This field result firmly supports accelerated stress reliability predictions.
Keywords :
Accelerated aging; Acceleration; Bipolar transistor circuits; Integrated circuit interconnections; Integrated circuit reliability; Integrated circuit technology; Large scale integration; Logic circuits; Stress; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1976.362714
Filename :
4208098
Link To Document :
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