Title :
New Self-Aligned Silicon Nanowire Transistors on Bulk Substrate Fabricated by Epi-Free Compatible CMOS Technology: Process Integration, Experimental Characterization of Carrier Transport and Low Frequency noise
Author :
Tian, Yu ; Huang, Ru ; Wang, Yiqun ; Zhuge, Jing ; Wang, Runsheng ; Liu, Jia ; Zhang, Xing ; Wang, Yangyuan
Author_Institution :
Peking Univ., Beijing
Abstract :
A new method to fabricate self-aligned silicon nanowire transistors (SNWTs) has been realized on bulk silicon substrate by fully epi-free compatible CMOS technology. The SNWTs exhibit excellent immunity of short-channel effects (SCEs) and achieve high Ion/Ioff ratio of 2.6times108. The transportation characteristics, ballistic efficiency and low frequency noise of SNWTs are investigated for the first time.
Keywords :
1/f noise; MOSFET; nanowires; semiconductor device noise; silicon; ballistic efficiency; bulk silicon substrate; carrier transport; epi-free compatible CMOS technology; low frequency noise; self-aligned silicon nanowire transistors; short-channel effects; transportation characteristics; CMOS process; CMOS technology; Etching; Fabrication; Low-frequency noise; MOSFETs; Resistance heating; Silicon; Substrates; Transportation;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419094
