Experimental Investigation on Superior PMOS Performance of Uniaxial Strained ≪110≫ Silicon Nanowire Channel By Embedded SiGe Source/Drain

Author

Li, Ming ; Yeo, Kyoung Hwan ; Yeoh, Yun Young ; Suk, Sung Dae ; Cho, Keun Hwi ; Kim, Dong-Won ; Park, Donggun ; Lee, Won-Seong

Author_Institution

Samsung Electron. Co. Ltd., Yongin

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

899

Lastpage

902

Abstract

Strained silicon nanowire transistor with embedded SiGe (e-SG) source/drain is investigated for the first time on experiments. By compressive stress induced by e-SG, PMOS performance is improved by about 85%. <110>-oriented nanowire channel also contributes 80% PMOS performance improvement relative to <100> direction. By combination of uniaxial stress and <110> channel direction, up to 136% PMOS performance enhancement is obtained so that superior PMOSFET to NMOSFET is for the first time observed with silicon channel material.

Keywords

Ge-Si alloys; MOSFET; compressive testing; elemental semiconductors; nanoelectronics; nanowires; semiconductor device testing; silicon; stress effects; PMOS performance enhancement; Si; Si-Ge; compressive stress; embedded silicon-germanium source-drain; silicon channel material; uniaxial strained silicon nanowire channel; Compressive stress; Degradation; Fabrication; Germanium silicon alloys; MOS devices; MOSFET circuits; Research and development; Silicon germanium; Substrates; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419095

Filename

4419095