Title :
Reliability Implications of Hot Electron Generation and Parasitic Bipolar Action in an IGFET Device
Author :
Abbas, S.A. ; Davidson, E.E.
Author_Institution :
IBM System Products Division, East Fishkill, Hopewell Junction, New York 12533
Abstract :
Potential reliability effects due to a profusion of hot electrons generated by a parasitic bipolar have been identified in short channel N-type IGFET devices. An explanation of the phenomenon as well as a mathematical and circuit model for the effects are presented. Results from the model will be used to predict changes in device characteristics with time.
Keywords :
Acceleration; Circuit simulation; Electric breakdown; Electric resistance; Electrons; Impact ionization; Mathematical model; Predictive models; Surface resistance; Voltage control;
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1976.362716
