A Novel Body Effect Reduction Technique to Recessed Channel Transistor Featuring Partially Insulating Layer Under Source and Drain : Application to Sub-50nm DRAM Cell

Author

Park, Jong-Man ; Sohn, Si-Ok ; Park, Jung-Soo ; Han, Sang-Yeon ; Lee, Jun-Bum ; Kim, Wookje ; Jeon, Chang-Hoon ; Kim, Shin-Deuk ; Young-Pil Kim ; Lee, Yong-Seok ; Yamada, Satoru ; Yang, Wouns ; Park, Donggun ; Lee, Won-Seong

Author_Institution

Adv. Technol. Dev. Team, Gyeonggi-Do

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

903

Lastpage

906

Abstract

We have successfully fabricated fully integrated advanced RCAT (Recess Channel Array Transistor) featuring partially insulating oxide layers in bulk Si substrate, named Partially-insulated-RCAT (Pi-RCAT) to suppress body effect of conventional RCAT and improve current drivability in DRAM cell. The Pi-RCAT demonstrated superior characteristics in body effect, subthreshold slope (SW) and higher current drivability with comparable I_on-I_off characteristics in comparison with conventional RCAT. Furthermore, in the partially-insulated-STI (Pi-STI) of core and peripheral structure formed simultaneously, well isolation characteristic is improved remarkably due to increase of effective isolation path. In this paper, Pi-RCAT is proved to be effective for the scalability and drivability of RCAT, and Pi-STI is suitable for the improvement of chip shrinkage efficiency.

Keywords

DRAM chips; field effect memory circuits; field effect transistors; DRAM cell; RCAT scalability; Si; body effect reduction technique; chip shrinkage efficiency; current drivability; isolation characteristics; partially insulating layer; partially-insulated-RCAT; partially-insulated-STI; recessed channel array transistor; size 50 nm; subthreshold slope; Degradation; Doping; Electrodes; Epitaxial layers; Insulation; Random access memory; Scalability; Substrates; Subthreshold current; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419096

Filename

4419096