DocumentCode :
2606090
Title :
Solid-State and Nanoelectronic Devices - Nanoscale Flash and DRAM Technologies
Author :
Krishnamohan, Tejas ; Fung, Samuel
Author_Institution :
Intel Corporation and Stanford University
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
911
Lastpage :
911
Keywords :
FinFETs; Flash memory; Intersymbol interference; Nanocrystals; Nanoscale devices; Nonvolatile memory; Photonic band gap; Random access memory; SONOS devices; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419099
Filename :
4419099
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2606090
بازگشت