Title :
Hot Electron Induced Degradation of N-Channel IGFETs
Author :
Abbas, S.A. ; Dockerty, R.C.
Author_Institution :
IBM System Products Division, East Fishkill, Hopewell Junction, New York 12533
Abstract :
Under certain bias conditions, electrons flowing through the channel of an n-channel IGFET can be injected into the gate insulator. A fraction of the injected electrons is trapped in the dielectric, producing a shift in device operating characteristics. This phenomenon is minimized by proper device design. A model is described to predict long-term shifts from accelerated stress test data.
Keywords :
Degradation; Dielectrics and electrical insulation; Electron traps; Life estimation; Secondary generated hot electron injection; Silicon; Stress measurement; Tellurium; Temperature; Testing;
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1976.362719
