Title :
Beryllium - A High Reliability Metallization
Author :
Hall, E.L. ; Koblinski, A.N. ; Gragg, J.E.
Author_Institution :
Motorola Semiconductor Products Group, 5005 E. McDowell Road, Phoenix, Arizona 85008
Abstract :
The results of an experimental study of beryllium and beryllium-aluminum alloys as high reliability advanced metallizations for use on semiconductor devices is presented. Methods for the deposition of thin films and the properties of these films are described and the application of these metallizations to actual devices is discussed. In addition, since beryllium can be a toxic material, precautions necessary for its use are detailed.
Keywords :
Aluminum; Conductivity; Gold; Metallization; Semiconductor device reliability; Semiconductor films; Semiconductor thin films; Silicon; Temperature; Thin film devices;
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1976.362721
