• DocumentCode
    2606144
  • Title

    Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices

  • Author

    Lombardo, S. ; Gerardi, C. ; Breuil, L. ; Jahan, C. ; Perniola, L. ; Cina, G. ; Corso, D. ; Tripiciano, E. ; Ancarani, V. ; Iannaccone, Giuseppe ; Iacono, G. ; Bongiorno, C. ; Razafindramora, J. ; Garozzo, C. ; Barbera, P. ; Nowak, E. ; Puglisi, R. ; Cost

  • Author_Institution
    CNR-IMM, Catania
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    921
  • Lastpage
    924
  • Abstract
    Double-gate and tri-gate FinFET type memories with nitride (SONOS-like) or Si nanocrystals storage with minimum feature sizes of 10 nm were realized. Strong performance advantages in program / erase characteristics and reliability deeply linked to the FinFET architecture are demonstrated.
  • Keywords
    MOSFET; flash memories; nanostructured materials; semiconductor device reliability; silicon compounds; FINFLASH devices; FinFET architecture; SONOS; Si-SiO2-SiN-SiO2-Si; nanocrystal memory devices; nanocrystals storage; program-erase characteristics; reliability; size 10 nm; Dielectric devices; Electric resistance; Electronic mail; FinFETs; Lithography; Nanocrystals; Nanoscale devices; Nonvolatile memory; SONOS devices; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419102
  • Filename
    4419102
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2606144