DocumentCode :
2606144
Title :
Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices
Author :
Lombardo, S. ; Gerardi, C. ; Breuil, L. ; Jahan, C. ; Perniola, L. ; Cina, G. ; Corso, D. ; Tripiciano, E. ; Ancarani, V. ; Iannaccone, Giuseppe ; Iacono, G. ; Bongiorno, C. ; Razafindramora, J. ; Garozzo, C. ; Barbera, P. ; Nowak, E. ; Puglisi, R. ; Cost
Author_Institution :
CNR-IMM, Catania
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
921
Lastpage :
924
Abstract :
Double-gate and tri-gate FinFET type memories with nitride (SONOS-like) or Si nanocrystals storage with minimum feature sizes of 10 nm were realized. Strong performance advantages in program / erase characteristics and reliability deeply linked to the FinFET architecture are demonstrated.
Keywords :
MOSFET; flash memories; nanostructured materials; semiconductor device reliability; silicon compounds; FINFLASH devices; FinFET architecture; SONOS; Si-SiO2-SiN-SiO2-Si; nanocrystal memory devices; nanocrystals storage; program-erase characteristics; reliability; size 10 nm; Dielectric devices; Electric resistance; Electronic mail; FinFETs; Lithography; Nanocrystals; Nanoscale devices; Nonvolatile memory; SONOS devices; Thickness control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419102
Filename :
4419102
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2606144
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