Title :
Measurement of linewidth and line edge roughness for 1D nano CD linewidth standard product lines
Author :
Han, Guo Q. ; Jiang, Zhuang D. ; Jing, Wei X. ; Zhu, Ming Z.
Author_Institution :
State Key Lab. for Manuf. Syst. Eng., Xian
Abstract :
One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.
Keywords :
electron beam deposition; multilayers; nanolithography; scanning electron microscopy; silicon compounds; size measurement; titanium; 1D nano CD linewidth standard product lines; SEM; Si; Ti-SiO2; electron-beam evaporation; image processing; line edge roughness measurement; linewidth measurement; lithography; multilayer thin films; scanning electron microscope; silicon substrates; Fabrication; Image processing; Lithography; Measurement standards; Nonhomogeneous media; Scanning electron microscopy; Silicon; Sputtering; Substrates; Transistors; image segmentation; line edge roughness; linewidth; multilayer thin films; scanning electrochemical microscopy;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601299
