Title :
New Generation of Z-RAM
Author :
Okhonin, S. ; Nagoga, M. ; Carman, E. ; Beffa, R. ; Faraoni, E.
Author_Institution :
PSE-B, Lausanne
Abstract :
A new generation of the single transistor floating body DRAM is introduced for the first time. The new memory is largely based on the bipolar transistor existing in the MOS structure. The memory´s main features are high margin, low-power consumption, and scalability.
Keywords :
DRAM chips; MOS memory circuits; bipolar transistors; MOS structure; Z-RAM; bipolar transistor; device scalability; single transistor floating body DRAM; Bipolar transistors; Ionization; Logic; MOS capacitors; MOSFETs; Random access memory; Read-write memory; Scalability; Silicon; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419103
