• DocumentCode
    2606158
  • Title

    New Generation of Z-RAM

  • Author

    Okhonin, S. ; Nagoga, M. ; Carman, E. ; Beffa, R. ; Faraoni, E.

  • Author_Institution
    PSE-B, Lausanne
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    925
  • Lastpage
    928
  • Abstract
    A new generation of the single transistor floating body DRAM is introduced for the first time. The new memory is largely based on the bipolar transistor existing in the MOS structure. The memory´s main features are high margin, low-power consumption, and scalability.
  • Keywords
    DRAM chips; MOS memory circuits; bipolar transistors; MOS structure; Z-RAM; bipolar transistor; device scalability; single transistor floating body DRAM; Bipolar transistors; Ionization; Logic; MOS capacitors; MOSFETs; Random access memory; Read-write memory; Scalability; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419103
  • Filename
    4419103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2606158