• DocumentCode
    2606187
  • Title

    A Unified-RAM (URAM) Cell for Multi-Functioning Capacitorless DRAM and NVM

  • Author

    Han, Jin Woo ; Ryu, Seong Wan ; Kim, Chungjin ; Kim, Sungho ; Im, Maesoon ; Choi, Sung Jin ; Kim, Jin Soo ; Kim, Kwang Hee ; Lee, Gi Sung ; Oh, Jae Sub ; Song, Myeong Ho ; Park, Yun Chang ; Kim, Jeoung Woo ; Choi, Yang-Kyu

  • Author_Institution
    Korea Adv. Inst. of Sci. & Technol., Daejeon
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    929
  • Lastpage
    932
  • Abstract
    A novel partially-depleted (PD) SONOS FinFET is demonstrated for unified function of a high speed capacitorless IT-DRAM and non-volatile memory (NVM). A floating body and O/N/O layer are combined in a single FinFET to provide multi-functional unified-RAM (URAM) operation. The fabricated URAM shows a VT window of 3 V with a retention time exceeding 10 years for NVM operation and a sensing margin of 9 muA with a program/erase time of 10 nsec for IT-DRAM operation in a single memory cell transistor.
  • Keywords
    DRAM chips; MOSFET; DRAM; URAM cell; multifunctioning capacitorless; nonvolatile memory; partially-depleted SONOS FinFET; Charge carrier processes; Electron traps; Etching; FinFETs; Flash memory; Impact ionization; Nonvolatile memory; Random access memory; SONOS devices; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419104
  • Filename
    4419104
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2606187