Title :
A Unified-RAM (URAM) Cell for Multi-Functioning Capacitorless DRAM and NVM
Author :
Han, Jin Woo ; Ryu, Seong Wan ; Kim, Chungjin ; Kim, Sungho ; Im, Maesoon ; Choi, Sung Jin ; Kim, Jin Soo ; Kim, Kwang Hee ; Lee, Gi Sung ; Oh, Jae Sub ; Song, Myeong Ho ; Park, Yun Chang ; Kim, Jeoung Woo ; Choi, Yang-Kyu
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Daejeon
Abstract :
A novel partially-depleted (PD) SONOS FinFET is demonstrated for unified function of a high speed capacitorless IT-DRAM and non-volatile memory (NVM). A floating body and O/N/O layer are combined in a single FinFET to provide multi-functional unified-RAM (URAM) operation. The fabricated URAM shows a VT window of 3 V with a retention time exceeding 10 years for NVM operation and a sensing margin of 9 muA with a program/erase time of 10 nsec for IT-DRAM operation in a single memory cell transistor.
Keywords :
DRAM chips; MOSFET; DRAM; URAM cell; multifunctioning capacitorless; nonvolatile memory; partially-depleted SONOS FinFET; Charge carrier processes; Electron traps; Etching; FinFETs; Flash memory; Impact ionization; Nonvolatile memory; Random access memory; SONOS devices; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419104
