DocumentCode
2606268
Title
Development of A 3D Simulator for Metal Nanocrystal (NC) Flash Memories under NAND Operation
Author
Nainani, A. ; Palit, S. ; Singh, P.K. ; Ganguly, U. ; Krishna, N. ; Vasi, J. ; Mahapatra, S.
Author_Institution
IIT Mumbai, Mumbai
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
947
Lastpage
950
Abstract
A 3D simulator for metal nanocrystal (NC) flash is developed and verified with published experimental data. The simulator is capable of extracting physical parameters and predicting their impact on cell performance. The simulator is used to optimize cell design and analyze performance with scaling, NC randomness and NC number fluctuations.
Keywords
NAND circuits; flash memories; integrated circuit modelling; integrated logic circuits; integrated memory circuits; logic simulation; nanoelectronics; nanostructured materials; 3D simulator; NAND operation; metal nanocrystal flash memories; nanocrystal number fluctuations; nanocrystal randomness; Capacitance; Conducting materials; Data mining; Flash memory; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Material storage; Nanocrystals; Predictive models;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419109
Filename
4419109
Link To Document