Title :
Development of A 3D Simulator for Metal Nanocrystal (NC) Flash Memories under NAND Operation
Author :
Nainani, A. ; Palit, S. ; Singh, P.K. ; Ganguly, U. ; Krishna, N. ; Vasi, J. ; Mahapatra, S.
Author_Institution :
IIT Mumbai, Mumbai
Abstract :
A 3D simulator for metal nanocrystal (NC) flash is developed and verified with published experimental data. The simulator is capable of extracting physical parameters and predicting their impact on cell performance. The simulator is used to optimize cell design and analyze performance with scaling, NC randomness and NC number fluctuations.
Keywords :
NAND circuits; flash memories; integrated circuit modelling; integrated logic circuits; integrated memory circuits; logic simulation; nanoelectronics; nanostructured materials; 3D simulator; NAND operation; metal nanocrystal flash memories; nanocrystal number fluctuations; nanocrystal randomness; Capacitance; Conducting materials; Data mining; Flash memory; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Material storage; Nanocrystals; Predictive models;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419109
