DocumentCode :
2606286
Title :
Current Capabilities and Future Prospects of Atomistic Process Simulation
Author :
Jaraiz, M. ; Castrillo, P. ; Pinacho, R. ; Rubio, J.E.
Author_Institution :
Univ. of Valladolid, Valladolid
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
951
Lastpage :
954
Abstract :
Atomistic process simulators, based on the Kinetic Monte Carlo (KMC) scheme, are an attempt to fulfill some of the ITRS expectations for process modeling and simulation. We present a general overview of its conception and evolution up to its current state, show some of the latest developments, and discuss the possible trends in atomistic process simulation for the coming years.
Keywords :
MOSFET; Monte Carlo methods; semiconductor process modelling; ITRS; atomistic process simulation; high-performance MOSFET devices; kinetic Monte Carlo scheme; process modeling; Atomic layer deposition; CMOS process; Fluctuations; Impurities; Kinetic theory; MOSFET circuits; Manufacturing processes; Monte Carlo methods; Predictive models; Simulated annealing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419110
Filename :
4419110
Link To Document :
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